IGBT High Power Module-F23 Series

Homray Semiconductor Technology’s IGBTs are classified as three types : Small Power IGBT Module, Medium Power IGBT Module and High Power IGBT Module. The application of IGBT module are used for high frequency drivers, solar inverters, UPS (Uninterruptible Power Supplies) , electric welding machine etc.

The advantage gained by the insulated gate bipolar transistor device over a BJT or MOSFET is that it offers greater power gain than the standard bipolar type transistor combined with the higher voltage operation and lower input losses of the MOSFET. The IGBT is suitable for many applications in power electronics, especially in Pulse Width Modulated (PWM) servo and three-phase drives requiring high dynamic range control and low noise.

Features
High speed IGBT in NPT technology
Low switching losses and low Vce(sat)
Including ultra fast & soft recovery anti-parallel FWD
High short circuit capability(10us)



Technial parameters reference as typical model HST-GL40B120F23 below:

Circuit Diagram & Package Dimensions


IGBT Inverter
Absolute Maximum Ratings


Characteristic values



Diode Inverter
Absolute Maximum Ratings